Amorphization and stress in ion-implanted crystalline solids

Amorphization and Solid-Phase Epitaxial Growth of C-Cluster Ion-Implanted Si

Amorphization and solid-phase epitaxial growth were studied in C-cluster ion-implanted Si. C7H7 ions were implanted at a C-equivalent energy of 10 keV to C doses of 0.1 9 10 cm 2 to 8.0 9 10 cm 2 into (001) Si wafers. Transmission electron microscopy revealed a C amorphizing dose of 5.0 9 10 cm . Annealing of amorphized specimens to effect solid-phase epitaxial growth resulted in defect-free gr...

Amorphization of crystalline Si due to heavy and light ion irradiation

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Radiation-induced amorphization of crystalline ice

We study radiation-induced amorphization of crystalline ice, analyzing the results of three decades of experiments with a variety of projectiles, irradiation energy, and ice temperature, finding a similar trend of increasing resistance of amorphization with temperature and inconsistencies in results from different laboratories. We discuss the temperature dependence of amorphization in terms of ...

Electrical activation of ion implanted Si in amorphous and crystalline In0.53Ga0.47As

The effect of pre-amorphization on the electrical activation of Si implants into In0.53Ga0.47As is investigated. Electrical measurements show that Si implants into pre-amorphized and crystalline In0.53Ga0.47As yield similar levels of activation (1.0 10 cm 3 in the pre-amorphized case and 9.0 10cm 3 in the crystalline case) upon rapid thermal annealing for 5 s at 750 C despite having very differ...

Onset of implant-related recombination in self-ion implanted and annealed crystalline silicon